2SK3799 2004 - 2 - 26 1 toshiba field effect transistor silicon n channel mos type ( ?? - mosiv) 2SK3799 switching regulator applications low drain - source on resistance: r ds (on) = 1.0 ?? (typ.) high forward transfer admittance: | y fs | = 7.0s (typ.) low leakage current: i ds s = 100 ? a (v ds = 720 v) enhancement - mode: v th = 2.0 ~ 4.0 v (v ds = 10 v, i d = 1 ma) maximum ratings ( ta = 25 c ) characteristics symbol rating unit drain - source voltage v dss 900 v drain - gate voltage (r gs = 20 k w ) v dgr 900 v gate - source voltage v gss 30 v dc (note 1) i d (8) drain current pulse (t = 1 ms) (note 1) i dp (24) a drain power dissipation (tc = 25 c) p d (47) w single pulse avalanche energy (note 2) e as tbd mj avalanche current i ar (8) a repetitive avalanche energy (note 3) e ar tbd mj channel temperature t ch 150 c storage temperature range t stg - 55~ 150 c thermal characteristics characterist ics symbol max unit thermal resistance, channel to case r th (ch - c) (2.66) c/w thermal resistance, channel to ambient r th (ch - a) 62.5 c/w note 1: please use devices on conditions that the channel temperature is below 150 c. note 2: tbd note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. unit: mm 1: gate 2: drain 3: source jedec jeita sc - 67 toshiba 2 - 10u1b weight : 1.7 g (typ.) 1 3 2 preliminary
2SK3799 2004 - 2 - 26 2 electrical characteristics (ta = 25 c) ch aracteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 m a gate - source breakdown voltage v (br) gss i g = 10 m a, v ds = 0 v 30 ? ? v drain cut - off current i dss v ds = 720 v, v gs = 0 v ? ? 100 m a dra in - source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 900 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain - source on resistance r ds (on) v gs = 10 v, i d = 4 a ? (1.0) (1.4) w forward transfer admittance ? y fs ? v ds = 10 v, i d = 4 a ? 7.0 ? s input capacitance c iss ? 2200 ? reverse transfer capacitance c rss ? 45 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 190 ? pf rise time t r ? 25 ? turn - on time t on ? 65 ? fall time t f ? 20 ? switching time turn - off time t off ? 120 ? ns total gate charge q g ? 60 ? gate - source charge q gs ? 34 ? gate - drain charge q gd v dd ~ - 400 v, v gs = 10 v, i d = 8 a ? 26 ? nc source - drain ratings and characteristics (ta = 25 c) ch aracteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? (8) a pulse drain reverse current (note 1) i drp ? ? ? (24) a forward voltage (diode) v dsf i dr = 8 a, v gs = 0 v ? ? - 1.7 v reverse recovery time t rr ? 1.4 ? m s reverse recovery charge q rr i dr = 8 a, v gs = 0 v, di dr /dt = 100 a/ m s ? 16 ? m c marking r l = 100 w 0 v 10 v v gs v dd ~ - 400 v i d = 4 a v out 4.7 w duty < = 1%, t w = 10 m s ?| lot number ?| type k3799 month (starting from alphabet a) year (last number of the christian era) preliminary
2SK3799 2004 - 2 - 26 3 the information contained herein is subject to change without notice. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any paten t or patent rights of toshiba or others. toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulner ability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such tosh iba product s could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. a lso, please keep in mind the precautions and conditions set forth in the ? handling guide for semiconductor devices, ? or ?toshiba semiconductor reliability h andbook? etc.. the toshiba products listed in this document are intended for usage in general electr onics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high qu ality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( ? unintended usage ? ). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, tra ffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer ? s own risk. toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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